| PART |
Description |
Maker |
| HYB39L128160AT |
128-MBIT SYNCHRONOUS LOW-POWER DRAM
|
Infineon Technologies AG
|
| IS42S32400B-6T IS42S32400B-7T IS42S32400B-6BL IS42 |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| HYI39S128160F |
128-MBit Synchronous DRAM
|
Qimonda
|
| IS45S32400B-6BA1 |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
http://
|
| IS42S32400D-6BLI IS42S32400D-6B-TR IS42S32400D-6TL |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
天津新技术产业园区管理委员会
|
| CY62136ESL-45ZSXI CY62136ESL1106 |
2-Mbit (128 K x 16) Static RAM Ultra low standby power
|
Cypress Semiconductor
|
| IS45S16800B IS45S16800B-7TA IS45S16800B-7TA1 IS45S |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| IC42S16800L IC42S16800 IC42S16800-7T IC42S16800-7T |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| 42S16800A IS42S16800A IS42S16800A-6T IS42S16800A-7 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution Inc
|
| IS62LV1216BLL |
128 K x 16 Low Voltage, Ultra Low Power CMOS SRAM(128 K x 16 低压，极低功耗CMOS静态RAM)
|
Integrated Silicon Solution, Inc.
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| M48Z129V-70PM1 M48Z129V-85PM1 M48Z129Y-70PM1 M48Z1 |
5.0 V or 3.3 V, 1 Mbit (128 Kb x 8) ZEROPOWER庐 SRAM
5.0 V or 3.3 V, 1 Mbit (128 Kb x 8) ZEROPOWER? SRAM
|
STMicroelectronics
|
