| PART |
Description |
Maker |
| HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM）的
|
Hitachi,Ltd.
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY5DU561622ALT HY5DU561622ALT-H HY5DU561622ALT-J H |
DDR SDRAM - 256Mb
256M-S DDR SDRAM
256M(32Mx8) DDR Sdram
|
Hynix Semiconductor
|
| HY5DU561622CT-D4 HY5DU56822CT-D4 HY5DU56822CT-D43 |
256M-P DDR SDRAM 32M X 8 DDR DRAM, 0.65 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| AN10935 |
Using SDR/DDR SDRAM memories
|
NXP
|
| K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
0603 18 OHM 1/16W
RESISTOR, 1K, 1%, SMT 0603
1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EDD2516AETA-6B-E EDD2508AETA-6B-E EDD2508AETA-5B-E |
256M bits DDR SDRAM
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| EDD2516AKTA-5 EDD2516AKTA-5C |
256M bits DDR SDRAM
|
Elpida Memory
|
| NT5CB256M4CN-AC NT5CB256M4CN-BE |
256M X 4 DDR DRAM, PBGA78
|
NANYA TECHNOLOGY CORP
|
| EDD2516KCTA-6BSI-E EDD2516KCTA-7ASI-E EDD2516KCTA- |
256M bits DDR SDRAM 256M bits DDR SDRAM
|
Elpida Memory
|
| EDD2516AETA-6B-E EDD2516AETA-5B-E EDD2508AETA-5C-E |
256M bits DDR SDRAM
|
Elpida Memory
|
