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DIM100PHM33-F000 - IGBT Power Module

DIM100PHM33-F000_3676244.PDF Datasheet


 Full text search : IGBT Power Module
 Product Description search : IGBT Power Module


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IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
IXYS, Corp.
MG300Q2YS65H 300 A, 1200 V, N-CHANNEL IGBT
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Toshiba Corporation
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TOSHIBA[Toshiba Semiconductor]
APTGT30H170T3G Full - Bridge Trench Field Stop IGBT Power Module 45 A, 1700 V, N-CHANNEL IGBT
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
APTGT100DH60TG Asymmetrical - Bridge Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
APTGT450DA60G Boost chopper Trench Field Stop IGBT Power Module 550 A, 600 V, N-CHANNEL IGBT
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
APTGT100DU60TG Dual common source Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
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TOSHIBA Intelligent Power Module Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
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TOSHIBA[Toshiba Semiconductor]
C67076-A2504-A17 BSM15GD120D2 IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 25 A, 1200 V, N-CHANNEL IGBT
Circular Connector; No. of Contacts:19; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Right Angle Plug; Insert Arrangement:14-19 IGBT功率模块(功率模相全桥包括快速滑行二极管
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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DIM100PHM33-F000 synchronous DIM100PHM33-F000 mos DIM100PHM33-F000 specification DIM100PHM33-F000 описание DIM100PHM33-F000 schematic
 

 

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