| PART |
Description |
Maker |
| BSS92-TR1 |
150 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
VISHAY SILICONIX
|
| DMMT5401-TP |
200 mA, 150 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
MICRO COMMERCIAL COMPONENTS
|
| IRF230 MTP12N20 MTP12N18 IRF231 IRF630 IRF232 IRF6 |
N-Channel Power MOSFETs, 12 A, 150-200 V
N-Channel Power MOSFETs, 12 A, 150-200 V
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| SPD4948SM SPD4942SM SPD4943SM SPD4944SM SPD4945SM |
1 AMPS 200-1000 VOLTS 150-200 nsec FAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| APT2X31D20J_05 APT2X30D20J APT2X31D20J APT2X31D20J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| IRF9130 IRF9131 IRF9132 IRF9133 IRF9531 IRF9533 IR |
200 V, P-channel power MOSFET
P-CHANNEL POWER MOSFETS
150 V, P-channel power MOSFET
60 V, P-channel power MOSFET
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| PHX18NQ20T PHX18NQ20T-01 PHX18NQ20T127 |
From old datasheet system
8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220F, 3 PIN
N-channel enhancement mode field-effect transistor 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| IMISM562BZT |
200 MHz, OTHER CLOCK GENERATOR, PDSO8 0.150 INCH, SOIC-8
|
Cypress Semiconductor, Corp.
|
| PYA28C256-12CWM PYA28C256-12CWMB PYA28C256-12LM PY |
Access Times of 150, 200, 250 and 350ns Software Data Protection
|
Pyramid Semiconductor C...
|
|
