PART |
Description |
Maker |
WE512K16-XG4X WE512K16-140G4C WE512K16-140G4CA WE5 |
Access time:200 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:20150 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:150 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:140 ns; 5V power supply; 512K x 16 CMOS EEPROM module EEPROM MCP
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White Electronic Designs
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CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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AS8E512K8CW-200/HQ AS8E512K8CW-300/HQ AS8E512K8CW- |
512K x 8 EEPROM module 512K x 8 EEPROM EEPROM Module
|
Austin Semiconductor
|
AS8E512K8CW-200_HQ AS8E512K8CW-300_HQ AS8E512K8 AS |
512K x 8 EEPROM EEPROM Module
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AUSTIN[Austin Semiconductor]
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AS29LV800T-90TI AS29LV800 AS29LV800B-120SC AS29LV8 |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 120ns access time 3V 1M】8/512K】16 CMOS Flash EEPROM 3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time
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ANADIGICS[ANADIGICS, Inc] Alliance Semiconductor
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89C1632RPQE-25 89C1632RPQH-25 89C1632RPQK-25 89C16 |
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 16兆位12k × 32的位)立方米的SRAM
|
Maxwell Technologies, Inc
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CY3LV512-10JI CY3LV010 CY3LV010-10JC CY3LV010-10JI |
1M CPDL boot EEPROM. 512K CPDL boot EEPROM. 512K / 1 Mbit CPLD Boot EEPROM
|
CYPRESS[Cypress Semiconductor]
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CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz 512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165 TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100 512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
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CAT28C16AKI-20 CAT25C03U-1.8 CAT25040YI-GT3 CAT24W |
EEPROM (256x8) 2K 1.8-6.0 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS EEPROM (4kx8) 32K 1.8-6.0 EEPROM (2048x8) 16K EEPROM (256x8) 2K 2.5-6.0 EEPROM 64K X 8 512K 5V EEPROM (256x8) (128x16) 2K EEPROM (8kx8) 64K 3V EEPROM (512x8) (256x16) 4K EEPROM (2048x8)(1024x16)16K EEPROM (128x8) 1k 1.8-6.0 EEPROM (8kx8) 64K 1.8-6.0 EEPROM 16K-Bit CMOS PARA EEPROM EEPROM (512x8) 4k 2.5-6.0 EEPROM (4096x8) 32k 1.8-6.0 EEPROM (384x8) 128k 16 EEPROM (2Kx8) 16K 5V 90ns
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Electronic Theatre Controls, Inc. ON Semiconductor Qualtek Electronics, Corp. Lumex, Inc. Vicor, Corp. EPCOS AG NXP Semiconductors N.V. Atmel, Corp. Linear Technology, Corp. Amphenol, Corp. Bourns, Inc. TE Connectivity, Ltd. Integrated Silicon Solution, Inc. Anpec Electronics, Corp.
|
DS1650YLPM-70-IND DS1650YLPM-100IND DS1650YLPM-70I |
512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDFP34 512K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DFP34 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DFP34
|
Maxim Integrated Products, Inc.
|
AS5C4008F-35 AS5C4008F-35_H AS5C4008F-35_LH AS5C40 |
512K x 8 SRAM SRAM MEMORY ARRAY 512K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, LCC-32 512K X 8 STANDARD SRAM, 17 ns, CDFP32 CERAMIC, DFP-32 512K X 8 STANDARD SRAM, 35 ns, CDFP32 CERAMIC, DFP-32 512K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32 512K X 8 STANDARD SRAM, 12 ns, CDIP32 512K X 8 STANDARD SRAM, 25 ns, CQCC32 512K X 8 STANDARD SRAM, CDSO32 512K X 8 STANDARD SRAM, 15 ns, CDSO32 512K X 8 STANDARD SRAM, 12 ns, CDFP32
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Austin Semiconductor, Inc Micross Components AUSTIN SEMICONDUCTOR INC
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