| PART |
Description |
Maker |
| CXD8862Q |
C-MOS GATE ARRAY
|
ETC
|
| TC14L TC11L TC11L003 TC11L007 TC14L040 TC11L005 TC |
7 K usable gate, 1.0 micron, CMOS gate array
300 usable gate, 1.5 micron, CMOS gate array
700 usable gate, 1.5 micron, CMOS gate array
4 K usable gate, 1.0 micron, CMOS gate array
500 usable gate, 1.5 micron, CMOS gate array
|
Toshiba Semiconductor
|
| TB62004FW B62006F TB62003FW TB62008F TB62008FW TB6 |
8CH DMOS TRANSISTOR ARRAY WITH GATE THROUGH & DMOS DRIVER
Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC 8CH DMOS TRANSISTOR ARRAY WITH GATE
8CH DMOS TRANSISTOR ARRAY WITH GATE INVERTER & DMOS DRIVER
8CH DMOS TRANSISTOR ARRAY WITH GATE NOR & DMOS DRIVER
8CH DMOS TRANSISTOR ARRAY WITH GATE NAND & DMOS DRIVER
|
TOSHIBA
|
| UPA1601 UPA1601GS UPA1601CX |
Power MOS FET array
UPA1601DataSheet|DataSheet[03/1994]
MONOLITHIC POWER MOSFET ARRAY
|
NEC
|
| EPF10K30EFC484-3DX EPF10K100BQC208-3DX EPF10K100BQ |
ASIC 专用集成电路
Field Programmable Gate Array (FPGA) 现场可编程门阵列（FPGA
Field Programmable Gate Array (FPGA) 现场可编程门阵列FPGA
|
TE Connectivity, Ltd.
DOMINANT Opto Technologies Sdn. Bhd.
Altera, Corp.
Vectron International, Inc.
Cypress Semiconductor Corp.
PATLITE, Corp.
|
| TLP250F |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
Toshiba Semiconductor
|
| XC4013E-1BG225C XC4010E-2BG225C XC4005E-4PQ100I XC |
13000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 576 CLBS, 10000 GATES, 166 MHz, PBGA225
10000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 400 CLBS, 7000 GATES, 125 MHz, PBGA225
5000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
FPGA, 100 CLBS, 2000 GATES, 125 MHz, PQFP100
FPGA, 400 CLBS, 7000 GATES, 125 MHz, PQFP208
|
Xilinx, Inc.
XILINX INC
|
| TB6200X TB62009P TB62003 TB62003F TB62003FW TB6200 |
8 CH DMOS TRANSISTOR ARRAY WITH GATE 8路DMOS晶体管阵列门
8CH DMOS TRANSISTOR APPAY WITH GATE
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| APT5015BLC |
POWER MOS VI 500V 32A 0.150 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| MB111XXX |
Bipolar Gate Array
|
Fujitsu
|
