| PART |
Description |
Maker |
| HM62W16256BLTT/BLTT-XXSL |
Low Power SRAMs
|
Hitachi Semiconductor
|
| HM62V16102LBPI-XX HM62V16102LBPI-XXSL |
Low Power SRAMs
|
Hitachi Semiconductor
|
| HM62W8512BLTT-XXUL HM62W8512BLTT/BLTT-XXSL HM62W85 |
Low Power SRAMs
|
Hitachi Semiconductor
|
| HM62V16258BLTT/BLTT-XXSL |
Low Power SRAMs
|
Hitachi Semiconductor
|
| HM62V8512BLTT-XXUL HM62V8512BLTT/BLTT-XXSL HM62V85 |
Low Power SRAMs
|
Hitachi Semiconductor
|
| N25S818HAT21I N25S818HAT21IT N25S818HAS21I N25S818 |
256Kb Low Power Serial SRAMs 32K 隆驴 8 bit Organization
256Kb Low Power Serial SRAMs 32K ? 8 bit Organization
256Kb Low Power Serial SRAMs 32K × 8 bit Organization
|
ON Semiconductor
|
| IDT71V65603 IDT71V65803S150PFI IDT71V65803S150BQI |
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
From old datasheet system
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs
|
IDT[Integrated Device Technology]
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| GS816273C-250 GS816273C-250I GS816273C-225 GS81627 |
18Mb Burst SRAMs
256K x 72 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS864032T-167IV GS864032T-200IV GS864032T-200V GS8 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 7.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4米1800万3200万36 72Mb同步突发静态存储器
|
GSI Technology, Inc.
|
