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K7S1636U4C - 512Kx36 & 1Mx18 QDR II b4 SRAM

K7S1636U4C_3723840.PDF Datasheet


Part No.	K7S1636U4C
Description	512Kx36 & 1Mx18 QDR II b4 SRAM
File Size	416.02K / 20 Page
Maker	Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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Related Part Number

PART	Description	Maker
K7S1636U4C K7S1618U4C-EC330	512Kx36 & 1Mx18 QDR II b4 SRAM QDR SRAM, PBGA165 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165	Samsung semiconductor Maxim Integrated Products, Inc.
K7S1636U4C	512Kx36 & 1Mx18 QDR II b4 SRAM	Samsung semiconductor
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K7A161830B K7A163630B	512Kx36 & 1Mx18 Synchronous SRAM	SAMSUNG ELECTRONICS
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K7K1636U2C K7K1618U2C	512Kx36 & 1Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
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K7B161825A K7A163600A K7A163601A K7B163625A K7A161	512Kx36 & 1Mx18 Synchronous SRAM 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 35x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 25x30 mm; Packaging: Bulk 512Kx36	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. ITT, Corp.
IS61QDP2B251236A IS61QDP2B251236A1 IS61QDP2B251236	512Kx36 and 1Mx18 configuration available	Integrated Silicon Solu...

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