| PART |
Description |
Maker |
| PBRN123Y PBRN123YK PBRN123YS PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 10 k?
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k??
|
NXP Semiconductors
|
| PBSS301ND |
20 V, 4 A NPN low VCesat (BISS) transistor 20伏，4安NPN型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS2515M PBSS2515M315 |
15 V. 0.5 A NPN low VCEsat (BISS) transistor
15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| MJ16018 MJW16018 ON1986 |
Power 10A 800V NPN
From old datasheet system
NPN Silicon Power Transistors
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Mobility Holdings, Inc.
|
| PBSS4160PANP |
NPN/NPN low VCEsat (BISS) transistor
|
NXP
|
| PBSS4160DS-15 |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4260PANP |
NPN/NPN low VCEsat (BISS) transistor
|
NXP
|
| PBSS2515M |
15 V, 0.5 A NPN low VCEsat (BISS) transistor 500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS4041NX |
60 V, 6.2 A NPN low VCEsat (BISS) transistor 6200 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS2515MB |
15 V, 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4032NZ |
30 V, 4.9 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
