| PART |
Description |
Maker |
| HUFA75542P3 HUFA75542S3S HUFA75542S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 75A条（丁）|63AB
75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
75A 80V 0.014 Ohm N-Channel UltraFET Power MOSFETs
|
Intersil, Corp.
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STS3C2F80 |
N-CHANNEL 80V - 0.069 OHM - 3A SO-8 P-CHANNEL 80V - 0.20 OHM - 2.3A SO-8 STripFET™ II POWER MOSFET
|
ST Microelectronics
|
| FDD3510H |
Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM P-Channel: -80V, -9.4A, 190mOHM
|
Fairchild Semiconductor
|
| STP30NE06 STP30NE06FP 6114 |
N - CHANNEL 60V - 0.042 Ohms - 30A - TO-220/TO-220FP STripFET POWER MOSFET
From old datasheet system
N - CHANNEL 60V - 0.042 - 30A - TO-220/TO-220FP STripFET TM POWER MOSFET
N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET
Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:47uF; Capacitance
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STK850 K850 |
N-CHANNEL 30V - 0.0024 - 30A - PolarPAK-TM STripFETPower MOSFET
N-CHANNEL 30V - 0.0024 Ω - 30A - PolarPAK-TM STripFET Power MOSFET
N-CHANNEL 30V - 0.0024 ヘ - 30A - PolarPAK-TM STripFET⑩ Power MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| RFD3N08 RFD3N08L RFD3N08LSM FN2836 |
3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 3A0V的，0.800欧姆，逻辑层次，N沟道功率MOSFET
From old datasheet system
3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HUF75531SK8 FN4848 |
6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET 6 A, 80 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
6A/ 80V/ 0.030 Ohm/ N-Channel/ UltraFET Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| FDS3890 FDS3890L86Z |
4.7 A, 80 V, 0.044 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
80V N-Channel Dual PowerTrench MOSFET
80V N-Channel Dual PowerTrench MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| IRFD9113 IRFD9110 |
(IRFD9110) P Channel Power MOSFET
-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
|
Harris Corporation
|
| STP30NM30N |
N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET
N-channel 300V - 0.078ヘ - 30A - TO-220 Ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
| IRFD123 IRFD120 IRFD122 IRFD121 RFD120 |
(IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs
1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs 1.3a规范，以.1A的，80V00V.30.40 Ohm的N通道功率MOSFET
|
HARRIS[Harris Corporation]
Harris Semiconductor
Harris, Corp.
|
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
