| PART |
Description |
Maker |
| SBT250-10JS |
100V, 25A Rectifi er
|
Sanyo Semicon Device
|
| APT75DL60B APT75DL60BG APT75DL60S APT75DL60SG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| APT100DL60B APT100DL60BG APT100DL60S APT100DL60SG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| APT30DL60BCT APT30DL60BCTG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| RA03M3540MD RA03M3540MD10 RA03M3540MD-101 |
RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
350 MHz - 400 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| ER2A |
SURFACE MOUNT SUPERFAST RECTIFI ER VOLTAGE - 50 to 600 Volts CURRENT - 2.0 Ampere
|
Yea Shin Technology Co., Ltd
|
| MJE15034 MJE15035 |
4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS 50 WATTS
|
ONSEMI[ON Semiconductor]
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| MJ10000 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS
|
Motorola, Inc
|
