| PART |
Description |
Maker |
| CMPD4150 |
high current high speed switching diodeHIGH CURRENT HIGH SPEED SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| CMPSH-3SE CMPSH-3AE CMPSH-3CE CMPSH-3E |
SMD Schottky Diode Dual: High Current: Common Cathode
SMD Schottky Diode Dual: High Current: In Series
SMD Schottky Diode Single: High Current
SMD Schottky Diode Dual: High Current: Common Anode
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| CMPD1001 CMPD1001A CMPD1001S PD1001A |
HIGH CURRENT SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| BAS56 |
DUAL HIGH CURRENT SWITCHING DIODE
|
Central Semiconductor Corp
|
| CMPD5001 CMPD5001S |
HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): -20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
|
TOSHIBA[Toshiba Semiconductor]
|
| LRB520S-30T1G-11 |
SCHOTTKY BARRIER DIODE Low current rectification and high speed switching
|
Leshan Radio Company
|
| CPH5504 |
High-Current Switching Applications 大电流开关应
NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| IKW50N65ES5 |
high Speed soft switching IGBT with full current rated RAPID 1 diode
|
Infineon Technologies A...
|
| 2SC5176 E001060 |
From old datasheet system
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING, DC-DC CONVERTER APPLICATIONS)
HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONCERTER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1489 E001352 |
From old datasheet system
N CHANNEL MOS TYPE (CHOPPER REGULATOR, HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)
CHOPPER REGULATOR APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| BY329X1500 BY329X-1500S BY329X-1500 BY329X-1500S12 |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Damper diode fast, high-voltage
Damper diode fast/ high-voltage
Damper diodes fast, high-voltage - I<sub>FRM</sub>: 16 A; I<sub>O (AV)</sub>: 10 A; V<sub>RRM</sub>: 1500 V; Package: SOD113 (TO-220F); Container: Horizontal, Rail Pack
|
http://
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
