| PART |
Description |
Maker |
| CY14B108M-ZSP20XC CY14B108K CY14B108K-ZS20XC CY14B |
1M X 8 NON-VOLATILE SRAM, 20 ns, PDSO44
8 Mbit (1024K x 8/512K x 16) nvSRAM with Real Time Clock; Organization: 1Mb x 8; Vcc (V): 2.7 to 3.6 V; Density: 8 Mb; Package: TSOP
512K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
512K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
512K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
|
CYPRESS SEMICONDUCTOR CORP
Cypress Semiconductor, Corp.
|
| DS1250YL-100 DS1250YL-70 |
512K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34
512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
|
Maxim Integrated Products, Inc.
|
| DS1250Y-70 |
4096k Nonvolatile SRAM 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32
|
Maxim Integrated Products, Inc.
|
| CY14B104L-BV45XIT CY14B104N-BV45XCT CY14B104N-BV45 |
4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44
4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO54
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| DS1250W DS1250WP-150 DS1250WP-150-IND 1250W DS1250 |
From old datasheet system
3.3V 4096k Nonvolatile SRAM 3.3 4096k非易失SRAM
3.3V 4096k Nonvolatile SRAM 512K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34
|
http://
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
MAXIM - Dallas Semiconductor
Electronic Theatre Controls, Inc.
Maxim Integrated Products, Inc.
|
| AS8NVLC512K32QC-45XT AS8NVLC512K32Q-25XT AS8NVLC51 |
512K x 32 Module nvSRAM 3.3V High Speed SRAM with Non-Volatile Storage
|
Austin Semiconductor
|
| HMN5128DV-85 HMN5128DV-85I HMN5128DV-70 HMN5128DV- |
Non-Volatile SRAM MODULE 4Mbit (512K x 8-Bit),32Pin-DIP, 3.3V
|
Hanbit Electronics Co.,Ltd
|
| AS7C4096A-12TCN AS7C4096A-15JI |
IC,AS7C4096A-12TCN,TSOP-44 II, SRAM,12NS,512K X 8,5V 512K X 8 STANDARD SRAM, 12 ns, PDSO44
512K X 8 STANDARD SRAM, 15 ns, PDSO36
|
Alliance Memory, Inc.
ALLIANCE MEMORY INC
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
