| PART |
Description |
Maker |
| K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/ |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
256Mb H-die DDR SDRAM Specification
|
Atmel, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS43R16320D-5TL IS43R32160D-5BL IS46R16320D-6TLA1 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
16M X 32 DDR DRAM, 0.7 ns, PBGA144
|
INTEGRATED SILICON SOLUTION INC
|
| HB54A2568FM-A75B HB54A2569FM-A75B HB54A2569FM-10B |
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
256MB Unbuffered DDR SDRAM DIMM
|
ELPIDA MEMORY INC
|
| K4H561638N-LCB3T00 K4H560838N-LLB30 |
N-die DDR SDRAM
32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Samsung semiconductor
|
| MT41J1G4THD-15 MT41J512M8THD-187E MT41J512M8THD-15 |
64M X 4 DDR DRAM, 1.5 ns, PBGA78
32M X 8 DDR DRAM, 1.87 ns, PBGA78
32M X 8 DDR DRAM, 1.5 ns, PBGA78
|
|
| DU5162ETR-FAC DU5162ETR-E3C H5DU5182ETR-E3C |
32M X 16 DDR DRAM, 0.65 ns, PDSO66
32M X 16 DDR DRAM, 0.75 ns, PDSO66
64M X 8 DDR DRAM, 0.75 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| MT46V8M16BJ-75EITA MT46V8M16BJ-75ELITA MT46V8M16BJ |
8M X 16 DDR DRAM, 0.75 ns, PBGA60 16 X 9 MM, LEAD FREE, FBGA-60
32M X 4 DDR DRAM, 0.75 ns, PBGA60
|
Xicon Passive Components
|
| HYMD232646C8J-J HYMD232646C8J-D43 |
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
| W9751G6JB-25I W9751G6JB-18 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84
32M X 16 DDR DRAM, 0.35 ns, PBGA84
|
WINBOND ELECTRONICS CORP
|
| V827332K04SATG-A0 |
32M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
MOSEL-VITELIC
|
