| PART |
Description |
Maker |
| MJ16018 MJW16018 ON1986 |
Power 10A 800V NPN
From old datasheet system
NPN Silicon Power Transistors
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Mobility Holdings, Inc.
|
| 2SC3824 |
Silicon NPN triple diffusion planar type 1 A, 800 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp.
|
| 2SC3981 2SC3981A |
TRANS NPN 40V 350MW SMD SOT23 5 A, 800 V, NPN, Si, POWER TRANSISTOR
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| KSC5802ASDTBTU |
10 A, 800 V, NPN, Si, POWER TRANSISTOR
|
FAIRCHILD SEMICONDUCTOR CORP
|
| TT2140LS SANYOELECTRICCO.LTD.-TT2140LS |
6 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COLOR TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS(NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR)
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Electric
SANYO[Sanyo Semicon Device]
|
| APT17F80S APT17F80B |
Power FREDFET; Package: D3 [S]; ID (A): 18; RDS(on) (Ohms): 0.58; BVDSS (V): 800; 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
MICROSEMI POWER PRODUCTS GROUP
|
| 2SC5041 |
7 A, 800 V, NPN, Si, POWER TRANSISTOR
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| 2SC5303 |
25 A, 800 V, NPN, Si, POWER TRANSISTOR
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
|
Sanyo Semicon Device
|
| KSC5030 |
NPN Silicon Transistor
High Voltage and High Reliabilty 6 A, 800 V, NPN, Si, POWER TRANSISTOR
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| BU2522DX |
Silicon Diffused Power Transistor 10 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BCW66G BCW65A BCW66F BCW65 Q62702-C1892 BCW65B BCW |
NPN Silicon AF Transistors (For general AF applications High current gain) 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
|
