| PART |
Description |
Maker |
| RF3932 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1023A |
250W GaN WIDE-BAND PULSED
|
RF Micro Devices
|
| RFHA1021U |
60W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| ECJ-2VB1H104K ECJ-2VB1H103K ERJ-8GEY0R00 ERJ-8GEYJ |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| 1EDI20N12AF 1EDI20N12AF-15 |
Single Channel MOSFET and GaN HEMT Gate Driver IC
|
Infineon Technologies A...
|
| DDW-JJD-N1 DDB-JJS-K1 DDB-JJS-K2 DDB-JJS-KL2-1-I1 |
LED GaN SINGLE COLOR LED, BLUE
LED GaN 氮化镓发光二极管
LED GaN SINGLE COLOR LED, WHITE
|
DOMINANT Opto Technologies Sdn. Bhd.
DOMINANT Opto Technologies Sdn Bhd.
DOMINANT[DOMINANT Semiconductors]
|
| UPD30100GC-40-9EU |
Transmitter; Package: PG-TSSOP-16; Frequency Band: 434.0 MHz 868.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 10.0 dBm; Temperature Range: -40.0 - 125.0 °C 64位微处理
|
Ecliptek, Corp.
|
| FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLM0910-15F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET
X-Band Internally Matched FET
|
Eudyna Devices Inc
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| CM530813 |
Dual SCR POW-R-BLOK Modules 130 Amperes/800 Volts
Dual SCR POW-R-BLOK⑩ Modules 130 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM4316A2 CM4312A2 |
Dual SCR POW-R-BLOK Modules 25 Amperes/1200-1600 Volts
Dual SCR POW-R-BLOK⑩ Modules 25 Amperes/1200-1600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
