| PART |
Description |
Maker |
| GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
| CM400DY-12H |
Dual IGBTMOD 400 Amperes/600 Volts 400 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| NGD18N40CLB NGD18N40CLBT4 |
From old datasheet system
Ignition IGBT 18 Amps, 400 Volts
Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on)
|
http://
ON Semiconductor
ONSEMI
|
| DIM400XSM65-K000 |
400 A, 6300 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD
|
| NGD8201NT4G NGD8201AN NGD8201ANT4G NGD8201N12 |
Ignition IGBT 20 A, 400 V, N.Channel DPAK
|
ON Semiconductor
|
| CM400DY-50H |
HIGH POWER SWITCHING USE INSULATED TYPE
400 A, 2500 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE
IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| CM400HA-12H |
Single IGBTMOD 400 Amperes/600 Volts
Single IGBTMOD 400 Amperes/600 Volts 400 A, 600 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| FGAF40N60UFTU FGAF40N60UFTUNL |
Ultrafast IGBT; Package: TO-3PF; No of Pins: 3; Container: Rail 40 A, 600 V, N-CHANNEL IGBT
Ultrafast IGBT 40 A, 600 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
| MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
