PART |
Description |
Maker |
IDT71T75602S133BG IDT71T75802S200BG IDT71T75802S20 |
512K x 36/ 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM 512K x 36, 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K x 36, 1M x 18 2.5V Synchronous ZBT?/a> SRAMs 2.5V I/O, Burst Counter Pipelined Outputs BULK COAXIAL CABLE; RE-SHAPABLE VERSION OF PE-047SR 512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 4.2 ns, PQFP100 High-Performance Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.2 ns, PBGA119 512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 3 ns, PQFP100 Current-Mode PWM Controller 14-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.8 ns, PQFP100 Current-Mode PWM Controller 8-PDIP -40 to 85 1M X 18 ZBT SRAM, 3.5 ns, PQFP100 Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 5 ns, PQFP100
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IDT Integrated Device Technology, Inc. SRAM
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IDT71V547S90PFI |
128K X 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Flow-Through Outputs 128K X 36 ZBT SRAM, 9 ns, PQFP100
|
Integrated Device Technology, Inc.
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IS61NVP102436-166TQI IS61NVP102436-166TQLI NVP2048 |
1M X 36 ZBT SRAM, 3.5 ns, PQFP100 TQFP-100 1M X 36 ZBT SRAM, 3.5 ns, PQFP100 LEAD FREE, TQFP-100 2M X 18 ZBT SRAM, 3.5 ns, PBGA165
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Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
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CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器 3.3V I/O28K x 36,Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36,流量通过ZBT SRAM的电压(3.3V或输输出Mb的流通式同步静态存储器 2.5V I/O28K x 32,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32,流量通过ZBT SRAM的电压(2.5V输入/输出Mb的流通式同步静态存储器
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Micron Technology, Inc.
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IDT71V547S100PF IDT71V547S100PFI IDT71V547S80PF ID |
From old datasheet system 128K X 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Flow-Through Outputs 3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM
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IDT[Integrated Device Technology]
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CY7C1471V25-100AXC CY7C1473V25-100AXI CY7C1473V25- |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PQFP100 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
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Cypress Semiconductor, Corp.
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CY7C1351F CY7C1351F-100AC CY7C1351F-100AI CY7C1351 |
4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 7.5 ns, PQFP100 4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 11 ns, PBGA119 4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 8 ns, PQFP100 4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 8 ns, PBGA119 4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture 4-Mb (128K x 36) Flow-through SRAM with NoBL Architecture
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
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GS8324Z72C-200 GS8324Z18B GS8324Z18C-200I GS8324Z7 |
2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 1M X 36 ZBT SRAM, 10 ns, PBGA209 2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 512K X 72 ZBT SRAM, 7.5 ns, PBGA209 2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 2M X 18 ZBT SRAM, 6 ns, PBGA119 2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 1M X 36 ZBT SRAM, 8.5 ns, PBGA209 512K X 72 ZBT SRAM, 6 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209 2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 512K X 72 ZBT SRAM, 10 ns, PBGA209
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GSI Technology, Inc.
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MT55L512V18FF-11 MT55L512V18FF-12 MT55L256L36FT-10 |
512K X 18 ZBT SRAM, 8.5 ns, PBGA165 512K X 18 ZBT SRAM, 9 ns, PBGA165 256K X 36 ZBT SRAM, 7.5 ns, PQFP100 256K X 36 ZBT SRAM, 8.5 ns, PQFP100 256K X 36 ZBT SRAM, 8.5 ns, PBGA165
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CYPRESS SEMICONDUCTOR CORP
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AS7C25512NTF32_36A AS7C25512NTF36A-10TQC AS7C25512 |
2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 8.5 ns, PQFP100 2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 7.5 ns, PQFP100 2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 51Vz 5mA-Izt 0.05 5uA-Ir 38.8Vr DO41-GLASS 5K/AMMO DIODE, ZENER, 24V, 5%, 1W& DIODE ZENER SINGLE 1000mW 33Vz 7.5mA-Izt 0.05 5uA-Ir 25.1Vr DO41-GLASS 5K/REEL NTD? Sync SRAM - 2.5V
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Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC
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