| PART |
Description |
Maker |
| FFM101 FFM102 FM107 FFM107 FFM104 FFM106 FFM105 FF |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
|
Rectron Semiconductor
RECTRON LTD
|
| 1N4942GP11 1N4948GP-AP |
1 Amp Glass Passivated Fast Recovery Rectifier 200 - 1000 Volts
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 ROHS COMPLIANT, PLASTIC PACKAGE-2
|
Micro Commercial Components, Corp.
|
| CBR1-D100 CBR1-D010 CBR1-D020 CBR1-D040 CBR1-D060 |
SILICON BRIDGE RECTIFIER 1AMP, 100 THRU 1000 VOLTS 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
SILICON BRIDGE RECTIFIER 1AMP, 100 THRU 1000 VOLTS 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
SILICON BRIDGE RECTIFIER 1AMP, 100 THRU 1000 VOLTS 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
From old datasheet system
Leaded Bridge Rectifier General Purpose
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| UF5408GP-AP UF5400GP11 |
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD ROHS COMPLIANT, PLASTIC PACKAGE-2
3 Amp Ultra Fast Glass Passivated Recovery Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
|
| GP02-17A |
High Voltage 1.0A Sintered Glass Passivated Rectifie
|
Olitech Electronics Co....
|
| 2A06 2A05 2A07 2A02 2A01 2A01-AP 2A07-BP |
2 Amp Silicon Rectifier 50 to 1000 Volts
2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15
2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
|
Micro Commercial Components
|
| ES1D ES1M |
1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC
|
Micro Commercial Components, Corp.
http://
Micro Commercial Compon...
|
| RS401L08 RS407GL-BP RS406GL-BP RS401GL-BP RS402GL- |
4 Amp Single Phase Bridge Rectifier 50 to 1000 Volts
RECTIFIER BRIDGE 4A 1000V RS-4L 4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
RECTIFIER BRIDGE 4A 200V RS-4L 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
天津环球磁卡股份有限公司
Micro Commercial Components, Corp.
Micro Commercial Compon...
|
| 1N3161 1N3161R 1N3162 1N3162R 1N3163 1N3163R 1N316 |
Standard Rectifier (trr more than 500ns)
SILICON POWER RECTIFIER 240 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 300 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 240 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 240 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| SMF10A-GS08 SMF15A-GS08 SMF15A-GS18 SMF12A-M-18 SM |
Surface Mount ESD Protection Diodes
DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB, ROHS COMPLIANT, PLASTIC, SMF, 2 PIN, Transient Suppressor
DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Transient Suppressor
|
Vishay Siliconix
Vishay Semiconductors
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
|
