PART |
Description |
Maker |
UPD44164084F5-E40-EQ1 UPD44164364F5-E50-EQ1 |
18M-BIT DDRII SRAM 4-WORD BURST OPERATION 1800万位的SRAM 4条DDRII字爆发运
|
NEC, Corp.
|
PD46184184BF1-E40-EQ1 PD46185084BF1-E40-EQ1 PD4618 |
18M-BIT DDR II SRAM 4-WORD BURST OPERATION 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
UPD44165084 UPD44165084F5-E60-EQ1 UPD44165364F5-E6 |
18M-BIT QDRII SRAM 4-WORD BURST OPERATION 1800万位推出QDRII SRAM4个字爆发运作 18M-BIT QDRII SRAM 4-WORD BURST OPERATION 1800万位推出QDRII SRAM个字爆发运作
|
NEC Corp. NEC, Corp.
|
PD44165094BF5-E33-EQ3-A PD44165094BF5-E35-EQ3 PD44 |
18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
PD46185092BF1-E40-EQ1 PD46185182BF1-E40-EQ1 PD4618 |
18M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
UPD44324082F5-E40-EQ2 UPD44324082F5-E50-EQ2 UPD443 |
36M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
R1Q5A3618B R1Q5A3618BBG-33R R1Q5A3618BBG-40R R1Q5A |
36-Mbit DDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
|
M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
MSM27C3252CZ MSM27C32B52CZ |
2097152-Word x 16-Bit or 4194304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
LC3564B LC3564BM LC3564BS LC3564BT LC3564BT-10 LC3 |
x8 SRAM 64K (8192-word 8-bit) SRAM with OE, CE1, and CE2 Control Pins 64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins 64K (8192-word x8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins 64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins 64K (8192-word 8-bit) SRAM with OE / CE1 / and CE2 Control Pins 64K (8192-word ′ 8-bit) SRAM with OE, CE1, and CE2 Control Pins 64K (8192-word 8-bit) SRAM with OE, CE1, and CE2 Control Pins 64K的(8192字?8位)与光电,CE1上SRAM和控制引脚铈
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd. Sanyo Electric Co., Ltd.
|
UPD4416008 UPD4416008G5-A15-9JF UPD4416008G5-A17-9 |
2M X 8 STANDARD SRAM, 17 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT
|
NEC
|
K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|