| PART |
Description |
Maker |
| RFP-10-100RV |
Flanged Resistors 10 Watts, 100Ω
Flanged Resistors 10 Watts, 100ヘ
|
Anaren Microwave
|
| RFP-400-100R RFP-800-100R |
Flanged Resistors 400 Watts, 100ohm
Flanged Resistors 400 Watts, 100 ohm
|
Anaren Microwave
|
| PTB20078 |
2.5 Watts, 1525660 MHz INMARSAT RF Power Transistor
2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor 2.5瓦，16250年国际海事卫星组织兆赫射频功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦，1.93-1.99 GHz的GOLDMOS场效应晶体管
85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTB20145 |
9 Watts, 91560 MHz Cellular Radio RF Power Transistor
9 Watts, 915-960 MHz Cellular Radio RF Power Transistor 9瓦，915-960兆赫蜂窝无线电射频功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| UMIL60 |
60 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz 60瓦，28伏特，AB类Defcom 225 - 400兆赫
60 Watts / 28 Volts / Class AB Defcom 225 - 400 MHz
|
ETC
Electronic Theatre Controls, Inc.
GHZTECH[GHz Technology]
|
| PTF10015 |
50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor
50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor
50 Watts, 30060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
