| PART |
Description |
Maker |
| IRG4BC30W-STRL |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
|
International Rectifier
|
| IRG4BC20W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
| IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRGPF30F |
900V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| IRGPF20F |
900V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| IRGPF50F 2003 IRGPF50 |
900V Discrete IGBT in a TO-3P (TO-247AC) package
INSULATED GATE BIPOLAR TRANSISTOR
From old datasheet system
|
International Rectifier
|
| CAT34WC02 |
2-kb, 100 kHz @ 1.7 V & 400 kHz @ 5.0 V
|
Catalyst Semiconductor
|
| IRG4BH20K-L |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-262 package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRFIBF30G IRFIBF30GPBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=1.9A)
|
IRF[International Rectifier]
|
| STU8NB90 6380 |
N-CHANNEL 900V - 0.7 Ohm - 8.9A - Max220 PowerMESH MOSFET
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N-CHANNEL 900V - 0.7 - 8.9A - Max220 PowerMESH TM MOSFET
N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
