| PART |
Description |
Maker |
| MT8LDT264HG-6X MT4LDT164HG-6X MT8LDT264HG-6S MT4LD |
x64 Fast Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Micron Technology, Inc.
|
| R2A20112ASP R2A20112ASP-15 |
Critical Conduction Mode Interleaved PFC Control IC
|
Renesas Electronics Corporation
|
| HYM5V64214ASLTZG-60 HYM5V64214ASLTZG-80 HYM5V64214 |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
ON Semiconductor
|
| HB56UW264DB-8BL |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
ITT, Corp.
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| NU-33B54B-R-A NU-33B54B-P-A NU-33B54B-P NU-33B54B- |
155 Mbps 1310 nm Burst Mode TX / 622 Mbps 1490 nm Continuous-Mode RX 3.3V, 2X5 SFF Package, Class B B-PON ONU Transceiver
|
Optoway Technology Inc
|
| AM29BDS643GT5KVAI AM29BDS643GT7KVAI AM29BDS643GT5G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 64兆位个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| LT-74D73D-PG |
3.3V, 1.25 Gbps 1490 nm Continuous-Mode TX / 1.25 Gbps 1310 nm Burst-Mode RX 2X5 SFF Package, GE-PON OLT Transceiver (IEEE 802.3ah-2004 1000BASE PX10)
|
Optoway Technology Inc
|
| S71NS-N |
MirrorBit? 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory
MirrorBit㈢ 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory
|
SPANSION
|
| PCD5043 PCD5043H |
DECT burst mode controller
|
PHILIPS[Philips Semiconductors]
|
| PCD5042 PCD5042H PCD5042HZ |
DECT burst mode controller
|
PHILIPS[Philips Semiconductors]
|
