PART |
Description |
Maker |
2SC5545ZS-TL-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, SC-61AA, MPAK-4 Silicon NPN Epitaxial VHF / UHF wide band amplifier
|
Renesas Electronics Corporation
|
2N3375 2N33752N3632_2N3733 RF25 2N3733 SD1075 2N36 |
From old datasheet system RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
2SC5488A |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
Sanyo Semicon Device
|
2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS From old datasheet system TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
BLW898 |
UHF linear power transistor UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
ASI10650 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR
|
ADVANCED SEMICONDUCTOR INC Advanced Semiconductor, Inc.
|
UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
MRF3866G MRF3866 MRF3866R1 MRF3866R2 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) From old datasheet system RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
2SC5051 2SC5051YZ-TR-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR CMPAK-3 Silicon NPN Epitaxial
|
Renesas Electronics Corporation
|
ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
|