| PART |
Description |
Maker |
| PTF10193 |
12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor
12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| PSV/30A-12 PSV/750C-12 PSV/1800E-63 PSV/1600E-15 P |
28.5 MHz - 31.5 MHz, 180 deg - RF/MICROWAVE PHASE SHIFTER
712.5 MHz - 787.5 MHz, 140 deg - RF/MICROWAVE PHASE SHIFTER
1665 MHz - 1935 MHz, 90 deg - RF/MICROWAVE PHASE SHIFTER
1480 MHz - 1720 MHz, 90 deg - RF/MICROWAVE PHASE SHIFTER
902.5 MHz - 997.5 MHz, 90 deg - RF/MICROWAVE PHASE SHIFTER
475 MHz - 525 MHz, 160 deg - RF/MICROWAVE PHASE SHIFTER
2312.5 MHz - 2687.5 MHz, 90 deg - RF/MICROWAVE PHASE SHIFTER
1110 MHz - 1290 MHz, 90 deg - RF/MICROWAVE PHASE SHIFTER
807.5 MHz - 892.5 MHz, 90 deg - RF/MICROWAVE PHASE SHIFTER
712.5 MHz - 787.5 MHz, 270 deg - RF/MICROWAVE PHASE SHIFTER
|
Astrodyne, Inc.
MEAN WELL Enterprises Co., Ltd.
NXP Semiconductors N.V.
|
| HMC599ST89 HMC599ST89E |
50 MHz - 960 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
GaAs pHEMT MMIC LNA, 75 Ohm 50 - 1000 MHz
|
HITTITE MICROWAVE CORP
Hittite Microwave Corpo...
|
| SPA860/85/13/0/DSNT SPA860/85/14/0/DSNT SPA860/85/ |
860 MHz - 960 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 12.5 dBi GAIN, 85 deg 3dB BEAMWIDTH
860 MHz - 960 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 14 dBi GAIN, 85 deg 3dB BEAMWIDTH
860 MHz - 960 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 10 dBi GAIN, 85 deg 3dB BEAMWIDTH
|
Vishay Intertechnology, Inc.
|
| HW8185 |
40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
FREESCALE SEMICONDUCTOR INC
|
| RFP-1500-19-50 RFP-1500-9-50 |
1930 MHz - 1990 MHz 50 ohm RF/MICROWAVE TERMINATION
925 MHz - 960 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Anaren, Inc.
ANAREN INC
|
| PTF10160 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| MPS-0909A9-82 |
925 MHz - 960 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 10 PIN
|
MicroWave Technology, Inc.
|
| MPAT-340420-20-10 MPAT-340420-20-15 MPAT-340420-30 |
3400 MHz - 4200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
5845 MHz - 6430 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
11700 MHz - 12200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
2000 MHz - 2200 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.7 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
17300 MHz - 17800 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.7 dB INSERTION LOSS-MAX
13750 MHz - 14500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
12200 MHz - 12750 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
1500 MHz - 1800 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
7900 MHz - 8400 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
MITEQ INC
|
| PTF10036 |
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
| PTF10019 |
70 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
70 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
