PART |
Description |
Maker |
CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构(2字突发结18 -兆位的DDR - II SRAM的) 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1423AV18-250BZC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Analog Integrations, Corp.
|
HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
CY7C1528V18-167BZC CY7C1528V18-167BZI CY7C1528V18- |
8M X 9 DDR SRAM, 0.5 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 8M X 9 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 72-Mbit DDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR-II SRAM 4-Word Burst Architecture 18-Mbit DDR-II SRAM 2-Word Burst Architecture 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
CY7C1318BV18-300BZI CY7C1318BV18-167BZI CY7C1916BV |
18-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 18 DDR SRAM, 0.45 ns, PBGA165 18-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 18 DDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
CY7C1523AV18-200BZI CY7C1523AV18-300BZI CY7C1524AV |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 18 DDR SRAM, 0.45 ns, PBGA165 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 36 DDR SRAM, 0.45 ns, PBGA165 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 18 DDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
GS8182Q18D-200I GSITECHNOLOGY-GS8182Q36D-133IT |
18Mb Burst of 2 SigmaQuad-II SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
UPD44164082F5-E50-EQ1 UPD44164362F5-E50-EQ1 UPD441 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION 1800万位的SRAM 2条DDRII字爆发运 2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
NEC, Corp.
|
GS81302R08E-200I GS81302R09E-200IT GS81302R09E-167 |
16M X 8 DDR SRAM, 0.45 ns, PBGA165 4M X 9 DDR SRAM, 0.45 ns, PBGA165 16M X 9 DDR SRAM, 0.5 ns, PBGA165 4M X 9 DDR SRAM, 0.5 ns, PBGA165
|
GSI TECHNOLOGY
|