| PART |
Description |
Maker |
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY5TQ1G431ZNFP-H8 HY5TQ1G431ZNFP-H7 HY5TQ1G431ZNFP |
256M X 4 DDR DRAM, 0.255 ns, PBGA82 FBGA-82
256M X 4 DDR DRAM, 0.225 ns, PBGA82 FBGA-82
64M X 16 DDR DRAM, 0.3 ns, PBGA100
64M X 16 DDR DRAM, 0.255 ns, PBGA100
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HY5PS1G1631CLFP-Y5I HY5PS1G431CLFP-Y5I HY5PS1G1631 |
64M X 16 DDR DRAM, PBGA84
256M X 4 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| K4H1G0438A-UCB30 K4H1G0838A-UCB00 |
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
128M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Cypress Semiconductor, Corp.
|
| HY5DU561622CT-D4 HY5DU56822CT-D4 HY5DU56822CT-D43 |
256M-P DDR SDRAM 32M X 8 DDR DRAM, 0.65 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| EDJ1108BASE-DJ-E EDJ1104BASE-AG-E |
128M X 8 DDR DRAM, 0.225 ns, PBGA78
256M X 4 DDR DRAM, 0.3 ns, PBGA78
|
ELPIDA MEMORY INC
|
| MT41K256M4JP-125G |
256M X 4 DDR DRAM, PBGA78
|
|
| W3EG2128M64ETSR335JD3SF |
256M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
| HY5DU56422AT HY5DU56422ALT HY5DU561622AT |
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 64Mx4 |.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
|
Hynix Semiconductor, Inc.
|
| NT2GC72B8PA1NF-CG NT2GC72B8PA0NF-CG |
256M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, UDIMM-240
|
Nanya Technology, Corp.
|
| MT18JDF25672PZ-1G1F1 |
256M X 72 DDR DRAM MODULE, DMA240 HALOGEN FREE, RDIMM-240
|
STMicroelectronics N.V.
|
| M471B5673DZ1-CG8 M471B6474DZ1-CG8 |
256M X 64 DDR DRAM MODULE, DMA204
64M X 64 DDR DRAM MODULE, DMA204
|
|
