PART |
Description |
Maker |
W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M7 |
128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 MO-237, DIMM-240 256M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.6 ns, DMA240 64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
|
Xilinx, Inc. XILINX INC
|
HMT125R7AFP4C HMT125R7AFP8C HMT31GR7AMP4C HMT151R7 |
DDR3 SDRAM Registered DIMM Based on 1Gb A version 128M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, RDIMM-240 512M X 72 DDR DRAM MODULE, DMA240
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
HYMP125P72CP4-C4 HYMP125P72CP4-S5 HYMP125P72CP4-S6 |
240pin Registered DDR2 SDRAM DIMMs 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240 512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240 128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240 256M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240 128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Hynix Semiconductor, Inc.
|
M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM 64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
M1Y1G64TU8HA0B-3C M1U1G64TU8HA0F-3C M1U1G64TU8HA0B |
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 GREEN, DIMM-240 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 DIMM-240
|
Nanya Technology, Corp.
|
HYS72T128320HP-3S-A |
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240
|
INFINEON TECHNOLOGIES AG
|
W3EG72125S202AJD3MG |
128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
HMT351U6BFR8C-G7 HMT325U6BFR8C-H9 HMT351U7BFR8C-H9 |
512M X 64 DDR DRAM MODULE, DMA240 256M X 64 DDR DRAM MODULE, DMA240 512M X 72 DDR DRAM MODULE, DMA240 128M X 64 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|
M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYS72D128000HR-8-A HYS72D128000GR-8-A |
128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 DIMM-184
|
Infineon Technologies AG
|
M392T2863QZA-CF7 |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Samsung Semiconductor Co., Ltd.
|
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