PART |
Description |
Maker |
GS815018AB-250 GS815018AGB-250 GS815036AB-250 GS81 |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 2 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 2 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.4 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.5 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.6 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.5 ns, PBGA119 512K X 36 LATE-WRITE SRAM, 1.4 ns, PBGA119
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GSI Technology, Inc.
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MCM63R836 MCM63R918FC3.7R MCM63R918FC3.3R |
512K X 18 LATE-WRITE SRAM, 1.65 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119 512K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119 MCM63R836
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FREESCALE SEMICONDUCTOR INC Freescale Semiconductor, Inc.
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GS8170DW72AC-300I GS8170DW36AC-300I GS8170DW36AC-2 |
512K X 36 STANDARD SRAM, 1.6 ns, PBGA209 18Mb Σ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI Technology
|
GS8150V18AB-300 GS8150V18AB-300I GS8150V18AB-333 G |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
|
GSI[GSI Technology]
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MCM69R736AZP5 MCM69R736AZP5R MCM69R736AZP8 MCM69R7 |
4M Late Write HSTL 128K X 36 LATE-WRITE SRAM, 4 ns, PBGA119 Circular Connector; No. of Contacts:22; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:36; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:36-1 RoHS Compliant: No
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Motorola, Inc. Motorola Mobility Holdings, Inc. MOTOROLA INC
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GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209
|
GSI Technology, Inc.
|
K7P321874C K7P323674C K7P323674C-HC300 |
1Mx36 & 2Mx18 SRAM 1M X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
|
Samsung semiconductor
|
GS8171DW72AC-300 GS8171DW36AC-300 GS8171DW36AC-300 |
18Mb ??x1Dp HSTL I/O Double Late Write SigmaRAM 18Mb B>1x1Dp HSTL I/O Double Late Write SigmaRAM 18Mb Σ1x1Dp HSTL I/O Double Late Write SigmaRAM
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GSI Technology
|
AS5C4008F-35 AS5C4008F-35_H AS5C4008F-35_LH AS5C40 |
512K x 8 SRAM SRAM MEMORY ARRAY 512K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, LCC-32 512K X 8 STANDARD SRAM, 17 ns, CDFP32 CERAMIC, DFP-32 512K X 8 STANDARD SRAM, 35 ns, CDFP32 CERAMIC, DFP-32 512K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32 512K X 8 STANDARD SRAM, 12 ns, CDIP32 512K X 8 STANDARD SRAM, 25 ns, CQCC32 512K X 8 STANDARD SRAM, CDSO32 512K X 8 STANDARD SRAM, 15 ns, CDSO32 512K X 8 STANDARD SRAM, 12 ns, CDFP32
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Austin Semiconductor, Inc Micross Components AUSTIN SEMICONDUCTOR INC
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AS7C4096A-12TCN AS7C4096A-15JI |
IC,AS7C4096A-12TCN,TSOP-44 II, SRAM,12NS,512K X 8,5V 512K X 8 STANDARD SRAM, 12 ns, PDSO44 512K X 8 STANDARD SRAM, 15 ns, PDSO36
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Alliance Memory, Inc. ALLIANCE MEMORY INC
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