| PART |
Description |
Maker |
| NE32740A NE32708 NE32740B NE32702 NE32700 |
TRANSISTOR | BJT | NPN | 50MA I(C) | MACRO-X
TRANSISTOR | BJT | NPN | 50MA I(C) | MICRO-X
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | CHIP 晶体管|晶体管|叩| 12V的五（巴西）总裁| 50mA的一（c）|芯片
|
Panasonic, Corp.
|
| MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五（巴西）总裁|芯片
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|芯片
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五（巴西）总裁|芯片
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC
Central Semiconductor, Corp.
Cypress Semiconductor, Corp.
|
| HN9C20FT |
TRANSISTOR | BJT | PAIR | NPN | 12V V(BR)CEO | 60MA I(C) | TSOP
|
|
| AT-42036 AT-42036-TR1 AT-42036-BLK |
AT-42036 · General purpose transistor
Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ECG396 ECG397 ECG395 ECG471 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 1A I(C) | TO-39
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 1A I(C) | TO-39
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-72 晶体管|晶体管|进步党| 25V的五（巴西）总裁| 50mA的一（c）|2
TRANSISTOR | BJT | NPN | 36V V(BR)CEO | 15A I(C) | SOT-121
|
Cypress Semiconductor, Corp.
|
| DTL1636 DTL1658 DTL1638 DTL1644 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | TO-210AE
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 1A I(C) | TO-66
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 1A I(C) | TO-3 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-66
|
Shindengen Electric Manufacturing Co., Ltd.
|
| ZXTN25012EFHTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
12V, SOT23, NPN medium power transistor
|
Diodes Incorporated
|
| BC413B BF479S |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 晶体管|晶体管|叩| 30V的五（巴西）总裁| 100mA的一（c）|2
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | MACRO-T
TRANSISTOR|BJT|NPN|30VV(BR)CEO|100MAI(C)|TO-92
|
Vectron International, Inc.
|
| 2SC4225 2SC4225R2 2SC4225R3 |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-323
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
|
NEC Corp.
NEC[NEC]
|
| 2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁| 10A条一（c）|3
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
