PART |
Description |
Maker |
X28VC256S-70 X28VC256TMB-90 X28VC256 X28VC256D-45 |
5 Volt/ Byte Alterable E2PROM 5 Volt, Byte Alterable E2PROM
|
XICOR[Xicor Inc.]
|
X28C512D-12 X28C512D-15 X28C512D-20 X28C512D-25 X2 |
5 Volt, Byte Alterable E2PROM 5 Volt/ Byte Alterable E2PROM
|
XICOR[Xicor Inc.]
|
XM28C020 |
5 Volt/ Byte Alterable E2PROM
|
XICOR
|
X28HC64JIZ-90 X28HC64SZ-70 |
5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 90 ns, PQCC32 5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 70 ns, PDSO28
|
Intersil, Corp.
|
X28HC64SIZ-12 X28HC64SIZ-70 X28HC64J-12 X28HC64JIZ |
64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC T&R 8K X 8 EEPROM 5V, 90 ns, PQCC32 64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC T&R 8K X 8 EEPROM 5V, 120 ns, PDSO28 64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 28-PDIP 8K X 8 EEPROM 5V, 90 ns, PDIP28 64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC 8K X 8 EEPROM 5V, 70 ns, PDSO28
|
Intersil Corporation http:// Intersil, Corp.
|
X28C513JZ-15 X28C512 X28C512_06 X28C512D-15 X28C51 |
5V, Byte Alterable EEPROM
|
INTERSIL[Intersil Corporation]
|
X28HC64_06 X28HC64 X28HC64EM-70 X28HC64J-70 X28HC6 |
5 Volt, Byte Alterable EEPROM
|
INTERSIL[Intersil Corporation]
|
XM28C040PM-25 XM28C040P XM28C040P-15 XM28C040P-20 |
High Density 5 Volt Byte Alterable Nonvolatile Memory Array 高密5伏可变字节非易失性存储器阵列
|
XICOR[Xicor Inc.]
|
X28HC64J-90C7871 X28HC64SI-70T1 X28HC64SI-15 |
64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 32-PLCC 8K X 8 EEPROM 5V, 90 ns, PQCC32 64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC T&R
|
Intersil, Corp. INTERSIL CORP
|
X28HC256PI X28HC256DI-15C7871 |
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-PDIP 32K X 8 EEPROM 5V, PDIP28 256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-CerDIP 32K X 8 EEPROM 5V, 150 ns, PDSO28
|
Intersil, Corp.
|
TC58V64BDC |
64-MBIT (8M 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
|
Toshiba Corporation
|
TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|