| PART |
Description |
Maker |
| Z8F082ASJ020SC Z8F081AHH020EC Z8F081AHH020SC Z8F08 |
Z8 Encore! XP-R F08xA Series with eXtended Peripherals
|
ZILOG[Zilog, Inc.]
|
| TG110-E050N5 TG110-E055N5 TG110-E120N5 TG110-E125N |
Extended Temperature Range, E-Ultra?/a> 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range, E-Ultra⑩ 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range, E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range/ E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules
DIODE ZENER DUAL ISOLATED 200mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12 SOT-363 3K/REEL
Extended Temperature Range, E-Ultra10/100BASE-TX SOIC-16 Magnetic Modules
|
List of Unclassifed Manufacturers
ETC[ETC]
N.A.
Electronic Theatre Controls, Inc.
|
| ADT7461ARMZ-2R ADT7461ARMZ-2RL7 ADT7461ARMZ-002 AD |
±1?/a> Temperature Monitor with Series Resistance Cancellation
±1 Temperature Monitor with Series Resistance Cancellation
/-1C TDM Extended Temp Range I.C. 4Ch SPECIALTY ANALOG CIRCUIT, PDSO8
|
ON Semiconductor
http://
|
| ST25E16 ST24E16 ST24EB3TR ST24EB6TR ST24EM1TR ST24 |
SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 16K (2K X 8) EEPROM
16 Kbit Serial I 2 C EEPROM with Extended Addressing
(ST24E16 / ST25E16) 16 Kbit Serial I2C EEPROM with Extended Addressing
CONFIGURATION DEVICE, 16MBIT,UBGA88; Memory type:Configuration FLASH; Interface type:Serial, Parallel; Memory size:16Mbit; Memory configuration:2MB; Time, access:90ns; Frequency:66.7MHz; Temp, op. min:0(degree C); Temp, op. RoHS Compliant: Yes
16 Kbit Serial I2C EEPROM with Extended Addressing 16千位串行I2C EEPROM，带有扩展寻址
|
http://
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| WSL1506E WSL1506E10E0EBA WSL1506E10E0EEA WSL1506E1 |
Power Metal Strip㈢ Flip Chip (Extended Range) Patents Pending
Power Metal Strip垄莽 Flip Chip (Extended Range) Patents Pending
Power Metal Strip庐 Flip Chip (Extended Range) Patents Pending
Power Metal Strip? Flip Chip (Extended Range) Patents Pending
|
Vishay Siliconix
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| F-CBS-F1 F-CBS-F3 F-CBS-F5 F-CBS-F2 |
Heat sink is prepared in TUNS100 series, CBS series, DHS200 series and DHS250 series.
|
List of Unclassifed Man...
|
| PEF81912-FV1.3 PEF81913-FV1.3 PEF81912-HV1.3 PEF81 |
Q-SMINT?IX 2B1Q Second Gen. Modular ISDN NT (Intelligent eXtended)
Q-SMINTIX (2B1Q Second Gen. Modular I...
2B1Q Second Generation Modular ISDN NT (Intelligent eXtended)
|
Infineon Technologies AG
|
| ADV7194KST ADV7194 |
Professional Extended-10⑩ Video Encoder with 54 MHz Oversampling
Professional Extended-10 Video Encoder with 54 MHz Oversampling
|
AD[Analog Devices]
|
