| PART |
Description |
Maker |
| N01L63W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit
|
ON Semiconductor
|
| GS71108U-12 GS71108U-12I GS71108U-10 GS71108U-10I |
128K x 8 1Mb Asynchronous SRAM 128K X 8 STANDARD SRAM, 12 ns, PBGA48
128K x 8 1Mb Asynchronous SRAM 128K X 8 STANDARD SRAM, 10 ns, PBGA48
128K x 8 1Mb Asynchronous SRAM 128K X 8 STANDARD SRAM, 15 ns, PBGA48
|
GSI Technology, Inc.
|
| N01M0818L1 N01M0818L1AN N01L0818L1AD-85I N01L0818L |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| GS71208TP-8 |
128K x 8 1Mb Asynchronous SRAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32
|
GSI Technology, Inc.
|
| AS7C31026B AS7C31026B-10JCN AS7C31026B-10JI AS7C31 |
SRAM - 3.3V Fast Asynchronous
Replaced by SN74LV174A : Hex D-Type Flip-Flop With Clear 16-SOIC -40 to 85
Replaced by SN74LV174A : Hex D-Type Flip-Flop With Clear 16-SSOP -40 to 85
Replaced by SN74LV174A : Hex D-Type Flip-Flop With Clear 16-TSSOP -40 to 85
3.3 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
Hex D-Type Flip-Flops With Clear 16-SSOP -40 to 85 64K X 16 STANDARD SRAM, 20 ns, PDSO44
8-Bit Parallel-Load Shift Registers 16-TSSOP -40 to 85 64K X 16 STANDARD SRAM, 15 ns, PDSO44
3.3 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
Hex D-Type Flip-Flops With Clear 16-SOIC -40 to 85 64K X 16 STANDARD SRAM, 20 ns, PDSO44
3.3 V 64K X 16 CMOS SRAM
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system
Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| MT58L32L32P MT58L32L36P MT58L64L18P |
32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器) 64K的18.3V的I / O的流水线，SCD的SyncBurst的SRAM兆，3.3V的输输出，流水线式，单循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
|
| LC35V1000BTS-70U LC35V1000BM LC35V1000BM-70U LC35V |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
Static RAMs (1Mb)
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
|
SANYO[Sanyo Semicon Device]
|
| 100C0347-TNC26 N01L083WC2AT2 100C0347 100C0347-BNC |
0 MHz - 400 MHz RF/MICROWAVE TRANSFER SWITCH, 0.5 dB INSERTION LOSS
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
DAICO INDUSTRIES INC
DAICO[DAICO Industries, Inc.]
NANOAMP[NanoAmp Solutions, Inc.]
http://
|
| AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
IC SMT SRAM 128K X 8 70NS 5V SOP-32
SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区32引脚闪存
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
