PART |
Description |
Maker |
SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET 600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 600V N-Channel B-FET / Substitute of SSU2N60A 600V N-Channel B-FET / Substitute of SSR2N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FQI12N60C FQB12N60C FQB12N60CTM |
600V N-Channel MOSFET 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
|
http:// FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFUC20 IRFRC20 IRFUC20PBF |
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A) (IRFRC20 / IRFUC20) Power MOSFET
|
IRF[International Rectifier]
|
IRFPC40 IRFPC40PBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.8A)
|
IRF[International Rectifier]
|
IRFB9N60 IRFB9N60APBF |
Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT6015JN APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
STP12NM60N STF12NM60N STB12NM60N-1 STW12NM60N STB1 |
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.35楼? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
International Rectifier, Corp.
|
FQD3N60CTMWS FQU3N60C |
N-Channel QFETMOSFET 600V, 2.4A, 3.4 N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ohms
|
Fairchild Semiconductor
|
STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND ST |
N-channel 600V - 0.37ヘ - 10A - FDmesh⑩ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK N-channel 600V - 0.37Ω - 10A - FDmesh?/a> II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK N-channel 600V - 0.37Ω - 10A - FDmesh II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK N-channel 600V - 0.37楼? - 10A - FDmesh垄芒 II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
|
STMicroelectronics
|