PART |
Description |
Maker |
FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
Infineon Technologies AG
|
MDA920A7 MDA920A2 MDA920A4 MDA920A6 MDA920A8 MDA92 |
Diode Switching 1.2KV 1.129KA 3-Pin
|
New Jersey Semiconductor
|
RT3-5-L2-SMT |
RELAY 2KV DIELECTRIC STRENGTH SMT TYPE
|
Adam Technologies, Inc.
|
2T2KF |
2KV Diode, Axial Leaded Fast Recovery Rectifier Diodes
|
Semtech Corporation
|
P6MU-XXXXZH52 P6MU-0505ZH52 P6MU-053R3ZH52 P6MU-12 |
Input voltage:5V, output voltage /-5V ( /-100mA), 5.2KV isolated 1W unregulated dual output 5.2 KV ISOLATED 1W UNREGULATED DUAL OUTPUT DIP14 5.2千伏隔震1W的未稳压双输出DIP14 Input voltage:24V, output voltage /-7.2V ( /-69mA), 5.2KV isolated 1W unregulated dual output
|
PEAK[PEAK electronics GmbH] http://
|
P8SG-247R2ZH52 P8SG-0505ZH52 P8SG-053R6ZH52 P8SG-1 |
Input voltage:5V, output voltage /-5V ( /-150mA), 5.2KV isolated 1.5W regulated dual output 5.2 KV ISOLATED 1.5 W REGULATED DUAL OUTPUT DIP24 5.2千伏隔震1.5糯稳压双输出DIP24 Input voltage:5V, output voltage /-3.6V ( /-200mA), 5.2KV isolated 1.5W regulated dual output
|
PEAK[PEAK electronics GmbH]
|
IRGC100B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展|芯片
|
Belden, Inc.
|
MAX2670GTBT |
GPS/GNSS Front-End Amplifier ESD Protected to ±2kV Human Body Model
|
Maxim Integrated Products
|
VDI75-12S3 VID75-12S3 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展| 75A条一(c
|
Analog Devices, Inc.
|
IXLK35N120AU1 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 58A I(C) | TO-264AA 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 58A条一(c)|64AA
|
IXYS, Corp.
|
VII100-12S4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一(c
|
Aimtec
|