PART |
Description |
Maker |
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
|
Cypress Semiconductor Corp.
|
CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz 512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165 TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100 512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32 Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes IC DRIVER 1/2BRDG LOW SIDE 16DIP DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
|
GS8161E18BD-150 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
TC554001FTI-85V TC554001FI-85V |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器(为512k字8静态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
CY62157EV30LL-45ZXI CY62157EV30LL-45BVI |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
W27E040-12 W27E040-90 W27E040P-12 W27E040P-90 W27E |
512K X 8 ELECTRICALLY ERASABLE EPROM 512K X 8 EEPROM 12V, 90 ns, PQCC32
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|
GS88436B-133 GS88436B-133I GS88436B-150 GS88436B-1 |
512K x 18, 256K x 36 8Mb S/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
|
Electronic Theatre Controls, Inc. GSI Technology
|
CY14B104MA-ZSP25XI CY14B104KA-ZS25XCT CY14B104KA C |
4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock 512K X 8 NON-VOLATILE SRAM, 20 ns, PDSO44
|
CYPRESS SEMICONDUCTOR CORP
|
CY7C1440AV33 CY7C1442AV33 CY7C1446AV33 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM(36-Mb (1M x 36/2M x 18/512K x 72)管道式同步SRAM)
|
Cypress Semiconductor Corp.
|