| PART |
Description |
Maker |
| GS8640ZV18T-250I GS8640ZV18GT-167I GS8640ZV18T-300 |
72Mb NBT SRAMs
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8644ZV18B GS8644ZV18E-166I GS8644ZV18B-250 GS864 |
72Mb NBT SRAMs
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8662DT19BD-300 GS8662DT19BD-333 GS8662DT19BD-400 |
72Mb SigmaQuad-II TM Burst of 4 SRAM
JEDEC-standard pinout and package
Dual Double Data Rate interface
72Mb SigmaQuad-II TMBurst of 4 SRAM
|
GSI Technology
|
| GS8640Z18T-V GS8640Z18T-250V GS8640Z18T-250IV |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 72Mb流水线和流量，通过同步唑的SRAM
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS864436B-166I GS864472C-166 GS864418B-150I GS8644 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 7 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 7 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GS8641ZV18 GS8641ZV32 GS8641ZV36 GSITECHNOLOGY-GS8 |
72Mb NBT SRAMs
|
GSI Technology
|
| GS8642Z18 GS8642Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
| GS864418 |
72Mb Burst SRAMs
|
GSI Technology
|
| K7I643684M-FI30 K7I641884M K7I641884M-CE25 K7I6418 |
72Mb DDRII SRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| GS8662S36E-250 GS8662S36E-250I GS8662S08E-167I GS8 |
72Mb Burst of 2 DDR SigmaSIO-II SRAM
|
GSI[GSI Technology]
|
| GS8641V36 GS8641V18 GS8641V32 GS8641V32E-200IT |
2M X 32 CACHE SRAM, 7.5 ns, PBGA165
72Mb Burst SRAMs
|
GSI Technology
|
| GS81332QT19CE-250M GS81332QT19CE-350M GS81332QT37C |
Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II 1.8
Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II TM
|
GSI Technology
|
