| PART |
Description |
Maker |
| HM5165160AJ-5 |
x16 Fast Page Mode DRAM
|
|
| HY514370SLTC70 HY514370JC80 HY514370SLRC80 HY51437 |
x16 Fast Page Mode DRAM
|
|
| TMS45160L-80DZ TMS45160L-80DGE TMS45160S-80DGE TMS |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
SCHURTER AG
|
| GM71C4270ALJ-80 GM71C4270AT-70 GM71C4270ALT-70 GM7 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
AMIC Technology, Corp.
|
| NN511666J-45 NN511663J-45 NN511666LJ-40 NN511663LJ |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Glenair, Inc.
|
| NN514170LJ-45 NN514170LJ-50 NN514170LJ-70 NN514170 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Microchip Technology, Inc.
|
| UPD424170LLE-A60 UPD424170LG5M-A60 UPD424170AG5-70 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
TE Connectivity, Ltd.
|
| AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO)
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation
Integrated Silicon Solution, Inc.
Lattice Semiconductor, Corp.
|
| HY5118164CSLTC-80 HY5118164CTC-70 HY5118164CSLJC-7 |
x16 EDO Page Mode DRAM
|
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| MB84VP23481FK-70 MB84VP23481FK-70PBS |
64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM
|
Spansion Inc.
|
