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MRF7S35120HSR3 - RF Power Field Effect Transistor

MRF7S35120HSR3_4303576.PDF Datasheet


 Full text search : RF Power Field Effect Transistor
 Product Description search : RF Power Field Effect Transistor


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PART Description Maker
RFH35N10 RFH35N08 POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
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ETC[ETC]
IRFF120 IRFF121 IRFF122 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
General Electric Solid State
GE Solid State
IRFF110 IRFF111 IRFF112 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
General Electric Solid State
GE Solid State
PTF10020 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
ERICSSON POWER MODULES AB
Ericsson Microelectronics
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New Jersey Semi-Conductor P...
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Motorola, Inc
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045 RF Power Field Effect Transistors
FREESCALE[Freescale Semiconductor, Inc]
MRF187 MRF187R3 MRF187SR3 RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA[Motorola, Inc]
MRF19085 MRF19085LR3 MRF19085LSR3 RF Power Field Effect Transistors
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MRF282 MRF282ZR1 MRF282SR1 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
 
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