PART |
Description |
Maker |
PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门)) TMOS POWER FET 14 AMPERES From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
MTD1N40 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
MTM40N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
|
MRF8S19140HR3 MRF8S19140HSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor
|
MRF8S19260HR6 MRF8S19260HSR6 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3 |
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
MTM15N20 MOTOROLAINC-MTM15N20 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|