| PART |
Description |
Maker |
| CY7C1049L-25VM |
25ns, 512Kx8 static RAM (SRAM)
|
Cypress
|
| ATV5000 |
IC,COMPLEX-EPLD,76-CELL,25NS PROP DELAY,LDCC,68PIN,PLASTIC
From old datasheet system
|
Atmel
|
| 5962L9960701QUA 5962L9960701QUC 5962L9960701QUX 59 |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow.
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow.
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow.
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
|
Aeroflex Circuit Technology
|
| IDT7052S25PQF |
SMD-IC,MEM,SRAM,2KX8 25NS,4PORT,PAR,PQFP 2K X 8 FOUR-PORT SRAM, 25 ns, PQFP132
|
Integrated Device Technology, Inc.
|
| BYW29-50 BYWB29-50 BYWF29-50 BYW29-100 BYW29-150 B |
Ultrafast Rectifiers, Forward Current 8.0A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V
|
Vishay
|
| UG8JT UGF8JT UGB8HT UG8HT |
Ultrafast Rectifiers, Forward Current 8.0A, Reverse Recovery Time 25ns, Reverse Voltage 500 to 600V
|
VISHAY
|
| AM27C020-120/BUA AM27C020-120/BXA AM27C020-255DE A |
x8 EPROM
1, 2, 6 and 8 Channel, 10-Bit Serial I/O Data Acquisition Systems; Package: PDIP; No of Pins: 16; Temperature Range: 0°C to 70°C
Single Chip 12-Bit Data Acquisition System; Package: PDIP; No of Pins: 20; Temperature Range: -40°C to 85°C
12-Bit, 800ksps Sampling A/D Converter with Shutdown; Package: SSOP; No of Pins: 28; Temperature Range: -40°C to 85°C
Precision Zero-Drift Operational Amplifier with Internal Capacitors; Package: PDIP; No of Pins: 14; Temperature Range: 0°C to 70°C x8存储
|
Samsung Semiconductor Co., Ltd.
|
| EDI7F433512V-BNC EDI7F233512V-BNC EDI7F433512V120B |
CMOS Programmable Peripheral Interface; Temperature Range: 0°C to 70°C; Package: 40-PDIP
AMD Flash Modules AMD的闪存模
CMOS Priority Interrupt Controller; Temperature Range: 0°C to 70°C; Package: 28-PDIP
|
Glenair, Inc.
|
| AM21L41-15DCB AM21L41-15PCB AM21L41-20DCB AM21L41- |
250µA, 3MHz, 200V/µsOperational Amplifier; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
x1 SRAM
Dual and Quad 250uA, 3MHz, 200V/us Operational Amplifier; Package: SO; No of Pins: 14; Temperature Range: 0°C to 70°C
12MHz, 400V/us Op Amp; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
25MHz, 600V/us Op Amp; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
High Power Synchronous DC/DC Controller; Package: SO; No of Pins: 20; Temperature Range: -40°C to 85°C x1的SRAM
|
RECOM Electronic GmbH
|
| S-10 S-10KN |
18 Bit System Integrating A/D Processor w/ Voltage Reference 10ppm, 20L PDIP, EPAD Enabled
17 Bit System Integrating A/D Processor w/ Voltage Reference 20ppm, 20L PDIP, EPAD Enabled, Industrial Temp
10.80.8mm Max.(L】W), 13.0mm Max. Height. (S-10K) 10.80.8毫米最大。（长】宽），十三点○毫米最大。高度（第S - 1万）
|
SUMIDA CORPORATION.
Sumida, Corp.
|
| ICS9148-36 ICS9148YF-36 ICS9148YF-36LF |
High-Performance Impact-X<TM> PAL<R> Circuits 24-PDIP 0 to 75 频率发生
100 MHz, PROC SPECIFIC CLOCK GENERATOR, PDSO48 0.300 INCH, SSOP-48
High-Performance Impact-X<TM> PAL<R> Circuits 24-PDIP 0 to 75
Frequency Generator & Integrated Buffers for PENTIUM/ProTM
Single Chip, 100MHz Aladdin V System Clock with 3 AGP Clocks
Integrated Circuit Systems
|
Integrated Circuit Syst...
Integrated Device Technology, Inc.
ICST[Integrated Circuit Systems]
|
|
