| PART |
Description |
Maker |
| MT6L56E |
VHF-UHF Band Low Noise Amplifier Application
|
Toshiba Semiconductor
|
| KTC3790S |
EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION
|
KEC(Korea Electronics)
|
| KTC3770UL |
EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION
|
KEC(Korea Electronics)
|
| MT6P07T |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application
|
TOSHIBA
|
| MT6P03AT |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application
|
TOSHIBA
|
| MT6P06E |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application
|
TOSHIBA
|
| 2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
From old datasheet system
TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4320 E000939 |
From old datasheet system
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
From old datasheet system
RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| KDV174 |
SILICON EPITAXIAL PIN DIODE(VHF-UHF BAND RF ATTENUATOR APPLICATION, AGC FOR AM/FM TUNER)
|
KEC(Korea Electronics)
|
| MT3S41FS07 MT3S41FS |
UHF Low-Noise Amplifier Application
|
Toshiba Semiconductor
|
| MT3S35FS |
UHF Low-Noise Amplifier Application
|
Toshiba Semiconductor
|
