| PART |
Description |
Maker |
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| MC68HCL05C8 MC68HSC05C8 68HC705C8 MC68HC05C8 MC68H |
TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,25A I(C),TO-264AA
IGBT; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):24V; Power Dissipation, Pd:200W; Collector Emitter Voltage, Vceo:900V; Transistor Polarity:N Channel
PROGRAMMING REFRERENCE GUIDE 编程REFRERENCE指南
|
Motorola, Inc.
Motorola Inc
Motorola Mobility Holdings, Inc.
|
| HGT1S1N120CNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 6.2AI（丙）|63AB
|
Intersil, Corp.
|
| GT8Q102SM |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-252VAR 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 8A条一（c）|52VAR
|
Panasonic Industrial Solutions
|
| F300R06KF |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 300A I(C) | MODULE-S 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 300一（c）|模块
|
Vishay Intertechnology, Inc.
|
| FF75R12KF |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 75A I(C) | M:HL093HD5.6 晶体管| IGBT的|正陈|双| 1.2KV五（巴西）国际消费电子展| 75A条一（c）|米：HL093HD5.6
|
Infineon Technologies AG
|
| HGT1S7N60B3S HGTP7N60B3 HGT1S7N60B3S9A HGTD7N60B3S |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|7A一（c）|63AB
14A, 600V, UFS Series N-Channel IGBTs
|
Cypress Semiconductor, Corp.
Fairchild Semiconductor
|
| GT5J331_SM GT5J311 GT5J331SM GT5J311SM |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-263AB
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
