| PART |
Description |
Maker |
| A28F010 |
1024K (128K x 8) CMOS FLASH MEMORY
|
INTEL[Intel Corporation]
|
| A28F010 29026604 |
1024K (128K x 8) CMOS FLASH MEMORY
From old datasheet system
|
Intel
|
| ST27C1001 |
1024K CMOS UV Erasable PROM
1024K ( 128K X 8 ) CMOS UV ERASABLE PROM
|
ST Microelectronics
STMicroelectronics
|
| 29F080-12 |
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY 800万位[1024K × 8]的CMOS平等部门闪存
|
Macronix International Co., Ltd.
|
| CY27H010-30ZC CY27H010-35JC CY27H010-35WMB CY27H01 |
128K x 8 High-Speed CMOS EPROM
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PQCC32
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PDSO32
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PDIP32
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PQCC32
From old datasheet system
|
Cypress Semiconductor, Corp.
Atmel, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| MX29F001TTC-90 MX29F001TTC-70 MX29F001TTC-12 MX29F |
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDSO32
x8 Flash EEPROM x8闪存EEPROM
|
Macronix International Co., Ltd.
|
| AS7C1025B AS7C1025B-20TJIN AS7C1025B-10JC AS7C1025 |
128 x 64 pixel format, LED or EL Backlight available 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 12 ns, PDSO32
5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-PDIP -55 to 125
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125
SRAM - 5V Fast Asynchronous
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| AT49F2048A AT49F2048A-70RC AT49F2048A-70RI AT49F20 |
2M bit, 5-Volt Read and 5-Volt Write Flash, Bottom Boot
From old datasheet system
2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO44
2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| 25C256 CAT25C256 25C128 CAT25C128 CAT25C256S16-1.8 |
256K SPI serial CMOS EEPROM 1.8-6.0V
128K SPI serial CMOS EEPROM 2.5-6.0V
SPI Serial EEPROM SPI串行EEPROM
128K/256K-BitSPISerialCMOSE2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
128K SPI serial CMOS EEPROM 1.8-6.0V
256K SPI serial CMOS EEPROM 2.5-6.0V
128K/256K-Bit SPI Serial CMOS E2PROM
|
http://
STMicroelectronics N.V.
Semtech, Corp.
Abracon, Corp.
CatalystSemiconductor
CATALYST[Catalyst Semiconductor]
|
| KM68V1002CI |
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W24L011AQ-10 W24L011AQ-12 W24L011AQ-15 W24L011AT-1 |
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32
TRANS PNP W/RES 60HFE NEW S TYPE 128K X 8 STANDARD SRAM, 15 ns, PDSO32
Circular Connector; No. of Contacts:4; Series:MS27474; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:12-4 RoHS Compliant: No
JT 55C 55#22M SKT PLUG
HIGH SPEED SRAM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
