| PART |
Description |
Maker |
| IRLR3714PBF IRLU3714PBF IRLR3714TRRPBF IRLR3714TRP |
High Frequency Isolated DC-DC
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20m楼? , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mΩ , ID = 36A )
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IRF7103Q IRF7103QTR IRF7103QN |
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO
Power MOSFET(Vdss=50V)
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| MTN002N05Y3 |
50V N-CHANNEL Enhancement Mode MOSFET
|
Cystech Electonics Corp.
|
| SMS840 |
0.13A , 50V , RDS(ON) 10 P-Channel Enhancement MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| PJX138K |
50V N-Channel Enhancement Mode MOSFET ?ESD Protected
|
Pan Jit International Inc.
|
| BSS138K |
50V N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor
|
| BSS138DW09 BSS138DW-7-F |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
MOSFET DUAL N-CHAN 50V SOT363 200 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Incorporated
Diodes, Inc.
|
| FDD26AN06A0 |
60V N-Channel PowerTrench MOSFET 60V, 36A, 26mO
|
FAIRCHILD[Fairchild Semiconductor]
|
| RFD14N05LSM RFP14N05L RFD14N05L |
MULTI DVI DAISY CHAINABLE RECEIVER - CATX 14 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
TV TO VGA/HDTV VIDEO SCALER 14 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs
14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
14A 50V 0.100 Ohm Logic Level N-Channel Power MOSFETs
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1 |
From old datasheet system
P-CHANNEL ENHANCEMENT?ODE
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
