PART |
Description |
Maker |
IRFP040 IRF9622 IRF9612 IRFP362 IRFP343 |
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 8.4A I(D) | TO-247AC TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 1.5A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 200伏五(巴西)直| 1.5AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 900MA I(D) | TO-220AB TRANSISTOR|MOSFET|P-CHANNEL|200VV(BR)DSS|1.5AI(D)|TO-220AB
TRANSISTOR|MOSFET|N-CHANNEL|50VV(BR)DSS|40AI(D)|TO-247AC
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International Rectifier, Corp.
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IRFIZ34N-004 IRFIZ46N-002 IRFIZ46N-029 IRFIZ46N-02 |
19 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 31 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 13 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 28 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 2.1 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 21 A, 60 V, 0.042 ohm, N-CHANNE 28 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 4.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. JST Mfg. Co., Ltd. Vishay Intertechnology, Inc. Austin Semiconductor, Inc
|
NIMD6302R2 |
HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET
|
ONSEMI[ON Semiconductor]
|
IRF637 IRFP256 IRFP257 IRFP242R IRF230R IRFP240R I |
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 6.5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 23A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 21A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 500MA I(D) | TO-250VAR TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 400MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 18A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 8A条(丁)|04AA TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 8A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 5A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 33A I(D) | TO-247 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|3A条(丁)|47 TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 22A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 275V五(巴西)直| 22A条(丁)|04AA
|
ECM Electronics, Ltd. Fairchild Semiconductor, Corp.
|
STD2N50 STD2N50-1 STD2N50T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-252 晶体管| MOSFET的| N沟道| 500V五(巴西)直|甲(丁)|52 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR -通道增强型功率MOS器件 STD2N50-1 I-PAK MOSFET-TRANSIT N-CHANNEL MOSFET
|
STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
IRFF431 2N6783 IRFF223 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.75A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.2A I(D) | TO-39 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-39 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 3A条(丁)| TO - 39封装
|
Fairchild Semiconductor, Corp.
|
2SA1666YI-UL 2SA1666YI-TR 2SC4903YL-UL 2SA1666YI-0 |
200 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR 100 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 30 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET 0.2 A, 50 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 20 V, 9 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 50 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET 0.2 A, 20 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET UHF BAND, Si, RF SMALL SIGNAL, FET 3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1 A, 60 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR 50 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET 100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.3 A, 100 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 2 A, 20 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET 2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET 5 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
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Bourns, Inc. LEDtronics, Inc. Integrated Device Technology, Inc. Vishay Beyschlag Air Cost Control Mini-Circuits Moeller Electric, Corp. OSRAM GmbH Cooper Hand Tools KOA Speer Electronics,Inc. ProMOS Technologies, Inc.
|
2SJ404 2SJ405 2SK2163 |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6A I(D) | TO-220AB Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 40A条(丁)|20VAR
|
EPCOS AG
|
ALD521DSD ALD521D ALD521DPD |
MOSFET, P POWERPAKMOSFET, P POWERPAK; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:11A; Current, Idm pulse:50A; Power, Pd:1.8W; Resistance, Rds on:0.0085R; SMD:1; 24 BIT SERIAL INTERFACE DIGITAL CONTROLLER
|
Advanced Linear Devices, Inc. ALD[Advanced Linear Devices]
|
IRFU214A IRFR214A |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-251AA TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 250V五(巴西)直| 2.2AI(四)|52AA
|
Intersil, Corp.
|
IRFPG22 IRFPE32 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 1.5A I(D) | TO-247AC TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.4A I(D) | TO-247AC 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 3.4AI(四)|47AC
|
Fairchild Semiconductor, Corp.
|
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