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RJH1CD7DPQ-A0 - 1200 V - 25 A - IGBT Application: Inverter

RJH1CD7DPQ-A0_4419428.PDF Datasheet


 Full text search : 1200 V - 25 A - IGBT Application: Inverter
 Product Description search : 1200 V - 25 A - IGBT Application: Inverter


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APT15GT120BR APT15GT120BRG APT15GT120SRG Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 15; 36 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
Microsemi, Corp.
Microsemi Corporation
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Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
Microsemi Corporation
Microsemi, Corp.
MGY25N120_D ON1934 MGY25N120 Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system
ONSEMI[ON Semiconductor]
IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N1 Low VCE(sat) IGBT with Diode High Speed IGBT with Diode 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD
IXYS, Corp.
IXYS[IXYS Corporation]
BSM400GA120DL 400A12L C67076-A2302-A70 IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
HGTP1N120BN HGTD1N120BNS HGTD1N120BNS9A    5.3A, 1200V, NPT Series N-Channel IGBT
5.3A, 1200V, NPT Series N-Channel IGBT 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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Powerex Power Semiconductor...
Powerex Power Semiconductors
Powerex, Inc.
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Dynex Semiconductor, Ltd.
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Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
2MBI225U4J-120-50 AN28F256A-150 AN28F256A-120 AP28 x8 Flash EEPROM
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FUJI ELECTRIC HOLDINGS CO., LTD.
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Infineon Technologies AG
 
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