| PART |
Description |
Maker |
| NTE103NPN |
Germanium Complementary Transistors Power Output / Driver
|
NTE
|
| NTE102A |
Germanium Complementary Transistors Medium Power Amplifier
|
NTE[NTE Electronics]
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| 2SC2411 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| Q60103-X151-D Q60103-X151-F1 Q60103-X151-G Q60103- |
24 V, 200 mA, PNP germanium transistor
PNP GERMANIUM TRANSISTORS 进步党锗晶体
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Siemens Semiconductor G...
|
| MJE182 MJE171 MJE181 MJE172 ON2017 MOTOROLAINC-MJE |
POWER TRANSISTORS COMPLEMENTARY SILICON 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA
From old datasheet system
COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| BFP62010 |
NPN Silicon Germanium RF Transistor
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| OA47 1N100A 1N933 OA79 AA113 AAZ15 AAZ18 AAZ17 1N3 |
GERMANIUM DIODES
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| 1N3717 1N3718 1N3719 1N3720 |
Germanium Diodes
|
New Jersey Semi-Conductor Products, Inc.
|
| OA81 |
Germanium Diode
|
ETC
|
| 1N4502 |
GERMANIUM DIODE
|
New Jersey Semi-Conductor Products, Inc.
|
