| PART |
Description |
Maker |
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| GL607 OA180 OA1182 OA1161 OA1154 |
10 V, 300 mA, gold bonded germanium diode
20 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
140 V, 500 mA, gold bonded germanium diode
55 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
|
| 2N3773 2N6609 ON0042 |
From old datasheet system
COMPLEMENTARY POWER TRANSISTORS
Complementary Slllcon Powar Translstors
|
ONSEMI[ON Semiconductor]
|
| BDX33B BDX34C BDX34B ON0204 BDX33C |
From old datasheet system
10 AMPERE COMPLEMENTARY
Darlington Complementary Silicon Power Transistors
|
Motorola Inc
ON Semiconductor
Motorola, Inc
|
| HIP5010 HIP5010IS HIP5010IS1 HIP5011 HIP5011IS HIP |
7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN HB BASED PRPHL DRVR WITH PWM, PSSO7
Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器（同步半桥驱动器）
7V, 17A SynchroFETComplementary Drive Synchronous Half-Bridge
7V, 17A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge
From old datasheet system
7V, 17A SynchroFET?Complementary Drive Synchronous Half-Bridge
7V, 17A SynchroFET Complementary Drive Synchronous Half-Bridge
7V/ 17A SynchroFET Complementary Drive Synchronous Half-Bridge
7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| BFP62010 |
NPN Silicon Germanium RF Transistor
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| 1N3717 1N3718 1N3719 1N3720 |
Germanium Diodes
|
New Jersey Semi-Conductor Products, Inc.
|
| OA85 |
GERMANIUM DIODE
|
ETC
|
| OA81 |
Germanium Diode
|
ETC
|
| 2N200 |
P-N-P GERMANIUM TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
