| PART |
Description |
Maker |
| CS200 CS200A |
65nm CMOS Technology
|
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
|
| S1K50000 |
Standard-Cell Development Flow
|
Epson Company
|
| STD80 |
0.5 Micron STD80 Standard Cell Library Introduction
|
Samsung Electronic
|
| JS28F128P30TF75A JS28F640P30TF75A |
Numonyx Axcell P30-65nm Flash Memory
Numonyx? Axcell P30-65nm Flash Memory
|
Micron Technology
|
| IDT6168LA15PI IDT6168LA IDT6168SA 6168LA_DS_9916 I |
5.0V, 4k X 4, CMOS, Asynchronous, Static RAM
From old datasheet system
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDSO20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 25 ns, CQCC20
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| JS28F00AP30BTFA JS28F00AP30EFA JS28F00AP30BFX JS28 |
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
|
MICRON
|
| AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
ALLIANCE MEMORY INC
ALSC[Alliance Semiconductor Corporation]
ETC[ETC]
Alliance Semiconductor, Corp.
|
| ATC35 |
ATC35 Summary [Updated 1/03. 14 Pages] The ATC35 Cell-based ASIC (CBIC) family features a comprehensive library of 0.35-micron standard logic and I/O
A comprehensive library of 0.35-micron standard logic and I/O cells designed to operate with a supply voltage of 3.3V /- 0.3V
|
ATMEL Corporation
|
| UPD94600 |
Cell Based CMOS ASIC
|
NEC
|
| ENA0989 LV4920H |
Bi-CMOS IC Class-D Audio Power Amplifier Power Cell BTL 15W】2CH, 10W】2CH
Bi-CMOS IC Class-D Audio Power Amplifier Power Cell BTL 15W×2CH, 10W×2CH
Bi-CMOS IC Class-D Audio Power Amplifier Power Cell BTL 15W隆驴2CH, 10W隆驴2CH
|
Sanyo Semicon Device
|
| OB33 |
OB33 is a 4.0 mA output pad cell, 0.6 um CMOS
|
ams AG
austriamicrosystems AG
|
| AS7C1025B AS7C1025B-20TJIN AS7C1025B-10JC AS7C1025 |
128 x 64 pixel format, LED or EL Backlight available 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 12 ns, PDSO32
5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-PDIP -55 to 125
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125
SRAM - 5V Fast Asynchronous
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
