| PART |
Description |
Maker |
| CY8C20142 CY8C20142-SX1I |
CapSense Express - 4 Configurable IOs
CapSense Express⑩ - 4 Configurable IOs
|
Cypress Semiconductor
|
| SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec)
TT electronics Semelab Limited
Seme LAB
|
| CY8C20046 CY8C20066 |
CapSense Applications
|
Cypress Semiconductor
|
| CY8CMBR211013 |
CapSense? Express 10-Button Controller
|
Cypress Semiconductor
|
| CY8C2014209 CY8C20142-SX1I |
CapSense Express-4 Configurable IOs
|
Cypress Semiconductor
|
| CY8C20746A-24FDXC CY8C20746A-24FDXCT CY8C20766A-24 |
1.8 V CapSense? Controller with SmartSense Auto-tuning
1.8 V CapSense? Controller with SmartSense?Auto-tuning
|
Cypress Semiconductor
|
| CY8C20766A-24FDXC CY8C20746A-24FDXCT CY8C20766A-24 |
1.8 V Programmable CapSense? Controller with SmartSense Auto-tuning 1?3 Buttons, 0? Sliders
1.8 V Programmable CapSense? Controller with SmartSense?/a> Auto-tuning 1?3 Buttons, 0? Sliders
1.8 V Programmable CapSense? Controller with SmartSense?Auto-tuning 1?3 Buttons, 0? Sliders
|
Cypress Semiconductor
|
| LS4D28-100-RN LS4D28-270-RN LS4D28-271-RN LS4D28-3 |
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.2 V, Enhancement Mode, 8L SOIC, EPAD Enabled 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.0 V, 8L PDIP, EPAD Enabled
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.4 V, Enhancement Mode, 8L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L PDIP, EPAD Enabled
|
http://
ICE Components, Inc.
ICE COMPONENTS INC
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
