| PART |
Description |
Maker |
| 0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| NE5550279A-T1A-A NE5550279A-A NE5550279A-T1-A |
Silicon Power LDMOS FET
|
California Eastern Labs
|
| NE5550779A NE5550779A-T1 NE5550779A-A |
Silicon Power LDMOS FET
|
California Eastern Labs
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| PXFC192207FH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTAB182002FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PXAC182908FV-V1 |
High Power RF LDMOS FET 240W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
| PXAC201202FC-V2 |
High Power RF LDMOS FET 120W, 28V, 1800 - 2200 MHz
|
Wolfspeed
|
| MXR9745T1 MXR9745RT1 |
31.5 dBm / 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
31.5 dBm 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| PTFA211001E |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz
|
Infineon Technologies AG
|
